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| POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation POSEICO SPA Via N. Lorenzi 8, 16152 Genova - ITALY Tel. ++ 39 010 6556234 - Fax ++ 39 010 6557519 Sales Office: Tel. ++ 39 010 6556775 - Fax ++ 39 010 6442510 RECTIFIER DIODE AR1109 Repetitive voltage up to Mean forward current Surge current 4400 V 1000 A 10.3 kA FINAL SPECIFICATION nov 02 - ISSUE : 05 Symbol Characteristic Conditions Tj [C] Value Unit BLOCKING V V I RRM RSM RRM Repetitive peak reverse voltage Non-repetitive peak reverse voltage Repetitive peak reverse current V=VRRM 150 150 150 4400 4500 50 V V mA CONDUCTING I I I F (AV) Mean forward current Mean forward current Surge forward current I t Forward voltage Threshold voltage Forward slope resistance 180 sin ,50 Hz, Th=55C, double side cooled 180 sin ,50 Hz, Tc=85C, double side cooled Sine wave, 10 ms without reverse voltage Forward current = 1800 A 150 1000 905 10.3 530 x 1E3 25 150 150 1.80 0.89 0.675 A A kA As V V mohm F (AV) FSM I t V V r FM F(TO) F SWITCHING t rr Q rr I rr Reverse recovery time Reverse recovery charge Peak reverse recovery current 150 s C A MOUNTING R th(j-h) R th(c-h) T F j Thermal impedance, DC Thermal impedance Operating junction temperature Mounting force Mass ORDERING INFORMATION : AR1109 S 44 standard specification Junction to heatsink, double side cooled Case to heatsink, double side cooled 37 7 -30 / 11.8 300 150 / 13.2 C/kW C/kW C kN g VRRM/100 AR1109 RECTIFIER DIODE FINAL SPECIFICATION nov 02 - ISSUE : 05 POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation DISSIPATION CHARACTERISTICS SQUARE WAVE Th [C] 150 140 130 120 110 100 90 80 70 60 50 0 200 400 600 800 IF(AV) [A] 1000 1200 1400 1600 30 60 90 120 180 DC PF(AV) [W] 3000 2500 2000 30 120 60 90 180 DC 1500 1000 500 0 0 200 400 600 800 IF(AV) [A] 1000 1200 1400 1600 AR1109 RECTIFIER DIODE FINAL SPECIFICATION nov 02 - ISSUE : 05 POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation DISSIPATION CHARACTERISTICS SINE WAVE Th [C] 170 150 130 110 90 90 120 30 60 70 180 50 0 200 400 600 800 IF(AV) [A] 1000 1200 1400 1600 PF(AV) [W] 3000 2500 90 120 180 2000 30 60 1500 1000 500 0 0 200 400 600 800 IF(AV) [A] 1000 1200 1400 1600 AR1109 RECTIFIER DIODE FINAL SPECIFICATION nov 02 - ISSUE : 05 POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation FORWARD CHARACTERISTIC Tj = 150 C 3500 3000 2500 Forward Current [A] 8 ITSM [kA] 2000 1500 1000 500 0 0.6 1.1 1.6 2.1 2.6 Forward Voltage [V] 12 SURGE CHARACTERISTIC Tj = 150 C 10 6 4 2 0 1 10 n cycles 100 TRANSIENT THERMAL IMPEDANCE DOUBLE SIDE COOLED 40.0 35.0 30.0 Zth j-h [C/kW] 25.0 20.0 15.0 10.0 5.0 0.0 0.001 0.01 0.1 t[s] 1 10 100 Distributed by All the characteristics given in this data sheet are guaranteed only with uniform clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm and roughness < 2 m. In the interest of product improvement POSEICO SpA reserves the right to change any data given in this data sheet at any time without previous notice. If not stated otherwise the maximum value of ratings (simbols over shaded background) and characteristics is reported. |
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